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PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
Rev. 06 -- 12 August 2004 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOSTM technology.
1.2 Features
s Logic level threshold s Low on-state resistance.
1.3 Applications
s DC-to-DC converters s General purpose switching.
1.4 Quick reference data
s VDS 25 V s RDSon 10.5 m s ID 66 A s Qgd = 3.6 nC (typ).
2. Pinning information
Table 1: Pin 1 2 3 mb Discrete pinning Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
mb
Simplified outline
Symbol
d
g
mbb076
s
1 123
2
3
SOT78 (TO-220AB)
Top view
SOT533 (I-PAK)
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
3. Ordering information
Table 2: Ordering information Package Name PHP66NQ03LT PHU66NQ03LT TO-220AB I-PAK Description Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 lead TO-220AB Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) Version SOT78 SOT533 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 43 A; tp = 0.15 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions 25 C Tj 175 C 25 C Tj 175 C; RGS = 20 k Min -55 -55 Max 25 25 20 57 40 66 45 228 93 +175 +175 57 228 90 Unit V V V A A A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
2 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
120 Pder (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 Tmb (C) 200
0
0
50
100
150
200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
ID I der = ------------------- x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
103 ID (A) 102
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
03ag19
Limit RDSon = VDS / ID
tp = 10 s
100 s
10
DC
1 ms 10 ms 100 ms
1 1 10 VDS (V)
102
Tmb = 25 C; IDM is single pulse; VGS = 5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
3 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
5. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Min Typ 60 70 Max 1.6 Unit K/W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient SOT78 SOT533 vertical in free air Symbol Parameter
5.1 Transient thermal impedance
03ag18
10 Zth(j-mb) (K/W)
1
= 0.5 0.2 0.1
P = tp T
10-1
0.05 0.02 single pulse
tp T
t
10-2 10-5
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
4 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
6. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 15 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 6 and 8 Tj = 25 C Tj = 175 C VGS = 5 V; ID = 25 A; Figure 6 and 8 Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 reverse recovery time recovered charge IS = 10 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 25 V VDS = 15 V; RL = 0.6 ; VGS = 5 V; RG = 5.6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 ID = 50 A; VDS = 15 V; VGS = 5 V; Figure 11 12 4.5 3.6 860 330 145 15 90 25 25 0.95 32 20 25 135 40 40 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC 9.1 16.4 11.2 10.5 18.9 13.6 m m m 10 10 500 100 A A nA 1 0.5 1.5 2 2.2 V V V 25 22 V V Min Typ Max Unit Static characteristics
Source-drain diode
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
5 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
80 ID (A) 60 Tj = 25 C 10 V 6 V 5 V
03ag20
4.5 V
25 RDSon (m) 20
03ag21
Tj = 25 C VGS = 4.5 V
4V 40
15
5V 6V
10 3.5 V 20 5 VGS = 3 V 0 0 0.5 1 1.5 VDS (V) 2 0 0 20 40 60
10 V
ID (A)
80
Tj = 25 C
Tj = 25 C
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
80 ID (A) 60 VDS > ID x RDSon
03ag22
Fig 6. Drain-source on-state resistance as a function of drain current; typical values.
2 a 1.5
03af18
40
1
20 175 C Tj = 25 C
0.5
0 0 1 2 3 4 VGS (V) 5
0 -60
0
60
120
Tj (C)
180
Tj = 25 C and 175 C; VDS > ID x RDSon
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
6 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
2.5 VGS(th) (V) 2 max
03aa33
10-1 ID (A) 10-2
03aa36
1.5
typ
10-3 min typ max
1
min
10-4
0.5
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of junction temperature.
10 VGS (V) 8 Tj = 25 C ID = 50 A VDD = 15 V
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
03ag25
6
4
2
0 0 10 20 QG (nC) 30
ID = 50 A; VDS = 15 V
Fig 11. Gate-source voltage as a function of gate charge; typical values.
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
7 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
80 IS (A) 60 VGS = 0 V
03ag23
104
03ag24
C (pF)
40
103
Ciss
20 175 C Tj = 25 C
Coss
Crss 0 0 0.3 0.6 0.9 VSD (V) 1.2 102 10-1 1 10 VDS (V) 102
Tj = 25 C and 175 C; VGS = 0 V
VGS = 0 V; f = 1 MHz
Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
8 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22
Fig 14. SOT78 (TO-220AB) package outline.
9397 750 13428 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
9 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
E E1 D1 mounting base D A1
A
Q
L
1 e1 e
2 b
3 wM c
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10
0.89 0.56 0.71 0.46
4.57 2.285
OUTLINE VERSION SOT533
REFERENCES IEC JEDEC TO-251 EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-18
Fig 15. SOT533 (I-PAK) package outline.
9397 750 13428 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
10 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
8. Revision history
Table 6: Revision history Release date Data sheet Change status notice Document number 9397 750 13428 Supersedes PHP_PHB_PHD66NQ03LT_5 Document ID PHP_PHU66NQ03LT_6 Modifications:
20040812 Product data sheet
* * * *
Removal of PHB66NQ03LT (now in separate data sheet) Removal of PHD66NQ03LT (now in separate data sheet) Addition of PHU66NQ03LT. Data sheet updated to latest standard. 9397 750 13107 9397 750 10158 9397 750 09284 9397 750 09119 9397 750 08725 PHP_PHB_PHD66NQ03LT_4 PHP_PHB_PHD66NQ03LT_3 PHP_PHB_PHD66NQ03LT_2 PHP_PHB_PHD66NQ03LT_1 -
PHP_PHB_PHD66NQ03LT_5 PHP_PHB_PHD66NQ03LT_4 PHP_PHB_PHD66NQ03LT_3 PHP_PHB_PHD66NQ03LT_2 PHP_PHB_PHD66NQ03LT_1
20040415 Product data sheet 20020909 Product data sheet 20020312 Product data sheet 20011210 Product data sheet 20011012 Product data sheet
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
11 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
9. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13428
(c) Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 06 -- 12 August 2004
12 of 13
Philips Semiconductors
PHP/PHU66NQ03LT
N-channel TrenchMOSTM logic level FET
14. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 12 August 2004 Document order number: 9397 750 13428
Published in The Netherlands

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